s o t -2 2 7 is oto p ? file # e145592 "ul recognized" g s s d n-channel fredfet absolute maximum ratings thermal and mechanical characteristics g d s single die fredfet unit a v mj a unit w c/w c v oz g inlbf nm ratings 49 31 245 30 1845 33 min typ max 540 0.23 0.15 -55 150 2500 1.03 29.2 10 1.1 parameter continuous drain current @ t c = 25c continuous drain current @ t c = 100c pulsed drain current 1 gate-source voltage single pulse avalanche energy 2 avalanche current, repetitive or non-repetitive characteristic total power dissipation @ t c = 25c junction to case thermal resistance case to sink thermal resistance, flat, greased surface operating and storage junction temperature range rms voltage (50-60hhz sinusoidal waveform from terminals to mounting base for 1 min.) package weight terminals and mounting screws. symbol i d i dm v gs e as i ar symbol p d r jc r cs t j ,t stg v isolation w t torque typical applications zvs phase shifted and other full bridge half bridge pfc and other boost converter buck converter single and two switch forward flyback features fast switching with low emi low t rr for high reliability ultra low c rss for improved noise immunity low gate charge avalanche energy rated rohs compliant APT47F60J 600v, 49a, 0.09 max, t rr 310ns APT47F60J power mos 8 ? is a high speed, high voltage n-channel switch-mode power mosfet. a proprietary planar stripe design yields excellent reliability and manufacturability. low switching loss is achieved with low input capacitance and ultra low c rss "miller" capaci- tance. the intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low emi and reliable paralleling, even when switching at very high frequency. reliability in ? yback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. microsemi website - http://www.microsemi.com 050-8174 rev c 8-2011 downloaded from: http:///
static characteristics t j = 25c unless otherwise speci ? ed dynamic characteristics t j = 25c unless otherwise speci ? ed source-drain diode characteristics 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 starting at t j = 25c, l = 3.39mh, r g = 25 , i as = 33a. 3 pulse test: pulse width < 380 s, duty cycle < 2%. 4 c o(cr) is de ? ned as a ? xed capacitance with the same stored charge as c oss with v ds = 67% of v (br)dss . 5 c o(er) is de ? ned as a ? xed capacitance with the same stored energy as c oss with v ds = 67% of v (br)dss . to calculate c o(er) for any value of v ds less than v (br)dss, use this equation: c o(er) = -1.28e-7/v ds ^2 + 5.36e-8/v ds + 2.00e-10. 6 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) microsemi reserves the right to change, without notice, the speci ? cations and information contained herein. g d s unit v v/c v mv/c a na unit s pf nc ns unit a v ns c a v/ns min typ max 600 0.57 0.075 0.09 2.5 4 5 -10 250 1000 100 min typ max 65 13190 135 1210 645 335 330 70 140 75 85 225 70 min typ max 49 245 1.0 268 310 474 570 1.6 4.2 11.4 17 20 test conditions v gs = 0v , i d = 250 a reference to 25c, i d = 250 a v gs = 10v , i d = 33a v gs = v ds , i d = 2.5ma v ds = 600v t j = 25c v gs = 0v t j = 125c v gs = 30v test conditions v ds = 50v , i d = 33a v gs = 0v , v ds = 25v f = 1mhz v gs = 0v , v ds = 0v to 400v v gs = 0 to 10v , i d = 33a, v ds = 300v resistive switching v dd = 400v , i d = 33a r g = 2.2 6 , v gg = 15v test conditions mosfet symbol showing the integral reverse p-n junction diode (body diode) i sd = 33a , t j = 25c, v gs = 0v t j = 25c t j = 125c i sd = 33a 3 t j = 25c v dd = 100v t j = 125c di sd / dt = 100a/ s t j = 25c t j = 125c i sd 33a, di/dt 1000a/ s, v dd = 400v, t j = 125c parameter drain-source breakdown voltage breakdown voltage temperature coef ? cient drain-source on resistance 3 gate-source threshold voltage threshold voltage temperature coef ? cient zero gate voltage drain current gate-source leakage current parameter forward transconductance input capacitance reverse transfer capacitance output capacitance effective output capacitance, charge related effective output capacitance, energy related total gate charge gate-source charge gate-drain charge turn-on delay time current rise time turn-off delay time current fall time parametercontinuous source current (body diode) pulsed source current (body diode) 1 diode forward voltage reverse recovery time reverse recovery charge reverse recovery current peak recovery dv/dt symbol v br(dss) ? v br(dss) / ? t j r ds(on) v gs(th) ? v gs(th) / ? t j i dss i gss symbol g fs c iss c rss c oss c o(cr) 4 c o(er) 5 q g q gs q gd t d(on) t r t d(off) t f symbol i s i sm v sd t rr q rr i rrm dv/dt 050-8174 rev c 8-2011 APT47F60J downloaded from: http:///
v gs = 7&8v 4.5v t j = 125c t j = 25c t j = -55c v gs = 10v 5.5v 6v 5v v ds > i d(on) x r ds(on) max. 250 sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 33a t j = 125c t j = 25c t j = -55c c oss c iss i d = 33a v ds = 480v v ds = 120v v ds = 300v t j = 125c t j = 25c t j = -55c t j = 150c t j = 25c t j = 125c t j = 150c c rss v gs , gate-to-source voltage (v) g fs , transconductance r ds(on) , drain-to-source on resistance i d , drain current (a) i sd, reverse drain current (a) c, capacitance (pf) i d , drain current (a) i d , drian current (a) v ds(on) , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure 1, output characteristics figure 2, output characteristics t j , junction temperature (c) v gs , gate-to-source voltage (v) figure 3, r ds(on) vs junction temperature figure 4, transfer characteristics i d , drain current (a) v ds , drain-to-source voltage (v) figure 5, gain vs drain current figure 6, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (v) figure 7, gate charge vs gate-to-source voltage figure 8, reverse drain current vs source-to-drain voltage 0 5 10 15 20 25 30 0 5 10 15 20 25 30 -55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 0 100 200 300 400 500 600 0 100 200 300 400 500 0 0.3 0.6 0.9 1.2 1.5 250200 150 100 50 0 3.02.5 2.0 1.5 1.0 0.5 0 120100 8060 40 20 0 1614 12 10 86 4 2 0 120100 8060 40 20 0 250200 150 100 50 0 20,00010,000 1000 100 10 250200 150 100 50 0 APT47F60J 050-8174 rev c 8-2011 downloaded from: http:///
sot-227 (isotop ? ) package outline 31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m 4 (4 places ) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * source drai n gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * source emitter terminals are shorte d internally. current handlin g capability is equal for eithersource terminal . 1ms 100ms r ds(on) scaling for different case & junction temperatures: i d = i d(t c = 25 c) *( t j - t c )/125 dc line 100 s i dm 10ms 13 s 100 s i dm 100ms 10ms 13 s r ds(on) dc line t j = 150c t c = 25c 1ms t j = 125c t c = 75c 0.5 single pulse 0.1 0.3 0.7 0.05 d = 0.9 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration i d , drain current (a) v ds , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure 9, forward safe operating area figure 10, maximum forward safe operating area z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 11. maximum effective transient thermal impedance junction-to-case vs pulse duration i d , drain current (a) 1 10 100 800 1 10 100 800 300100 10 1 0.1 0.250.20 0.15 0.10 0.05 0 300100 10 1 0.1 APT47F60J 050-8174 rev c 8-2011 downloaded from: http:///
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